dual igbt s-series module 600 amperes/1200 volts CM600DY-24S 1 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 11/12 rev. 0 description: powerex dual igbt modules are designed for use in switching applications. each module consists of two igbt transistors in a half-bridge configuration with each transistor having a reverse- connected super-fast recovery free-wheel diode. all components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. features: low drive power low v ce(sat) discrete super-fast recovery free-wheel diode isolated baseplate for easy heat sinking applications: ac motor control motion/servo control ups welding power supplies laser power supplies ordering information: example: select the complete module number you desire from the table - i.e. CM600DY-24S is a 1200v (v ces ), 600 ampere dual igbt power module. current rating v ces type amperes volts (x 50) cm 600 24 a w f f n j g g h e b l (4 places) d m (3 places) k k k p p p q q v z y x v u c s r c2e1 e2 c1 g2 e2 e1 g1 g2 e2 (es2) e1 (es1) g1 c1 e2 c2e1 tr2 di2 tr1 di1 label tolerance otherwise specified division of dimension tolerance 0.5 to 3 0.2 over 3 to 6 0.3 over 6 to 30 0.5 over 30 to 120 0.8 over 120 to 400 1. 2 outline drawing and circuit diagram dimensions inches millimeters a 4.33 110.0 b 3.15 80.0 c 1.14+0.04/-0.02 29.0+1.0/-0.5 d 3.660.01 93.00.25 e 2.440.01 62.00.25 f 0.98 25.0 g 0.24 6.0 h 0.59 15.0 j 0.81 20.5 k 0.55 14.0 l 0.26 dia. 6.5 dia. m m6 metric m6 dimensions inches millimeters n 1.18 30.0 p 0.71 18.0 q 0.28 7.0 r 0.83 21.2 s 0.33 8.5 t 0.016 0.4 u 0.16 4.0 v 0.11 2.8 w 0.30 7.5 x 0.21 6.3 y 0.47 12.0 z 0.85 21.5
CM600DY-24S dual igbt s-series module 600 amperes/1200 volts 2 11/12 rev. 0 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com absolute maximum ratings, t j = 25c unless otherwise specifed characteristics symbol rating units collector-emitter voltage (g-e short-circuited) v ces 1200 volts gate-emitter voltage (c-e short-circuited) v ges 20 volts collector current (dc, t c = 112c) *2,*4 i c 600 amperes collector current (pulse, repetitive) *3 i crm 1200 amperes total power dissipation (t c = 25c) *2,*4 p tot 4050 watts emitter current *2 i e *1 600 amperes emitter current (pulse, repetitive) *3 i erm *1 1200 amperes isolation voltage (terminals to baseplate, rms, f = 60hz, ac 1 minute) v iso 2500 volts maximum junction temperature t j(max) 175 c maximum case temperature *4 t c(max) 125 c operating junction temperature (under switching) t j(opr) -40 to +150 c storage temperature t stg -40 to +125 c *1 represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (fwdi). *2 junction temperature (t j ) should not increase beyond maximum junction temperature (t j(max) ) rating. *3 pulse width and repetition rate should be such that device junction temperature (t j ) does not exceed t j(max) rating. *4 case temperature (t c ) and heatsink temperature (t s ) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. refer to the figure to the right for chip location. the heatsink thermal resistance should be measured just under the chips. 0 0 0 20.4 33.6 46.8 66.1 79.3 di1 di1 di1 tr2 tr1 tr1 tr1 di2 tr2 di2 tr2 di2 57.5 44.3 31.1 35.6 49.1 label side tr1/tr2: igbt di1/di2: fwdi
CM600DY-24S dual igbt s-series module 600 amperes/1200 volts 3 11/12 rev. 0 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com electrical characteristics, t j = 25c unless otherwise specifed characteristics symbol test conditions min. typ. max. units collector-emitter cutoff current i ces v ce = v ces , g-e short-circuited 1 ma gate-emitter leakage current i ges v ge = v ges , c-e short-circuited 5 a gate-emitter threshold voltage v ge(th) i c = 60ma, v ce = 10v 5.4 6 6.6 volts collector-emitter saturation voltage v ce(sat) i c = 600a, v ge = 15v, t j = 25c *5 1.85 2.25 volts (terminal) i c = 600a, v ge = 15v, t j = 125c *5 2.05 volts i c = 600a, v ge = 15v, t j = 150c *5 2.10 volts collector-emitter saturation voltage v ce(sat) i c = 600a, v ge = 15v, t j = 25c *5 1.70 2.15 volts (chip) i c = 600a, v ge = 15v, t j = 125c *5 1.90 volts i c = 600a, v ge = 15v, t j = 150c *5 1.95 volts input capacitance c ies 60 nf output capacitance c oes v ce = 10v, g-e short-circuited 12 nf reverse transfer capacitance c res 1.0 nf gate charge q g v cc = 600v, i c = 600a, v ge = 15v 1400 nc turn-on delay time t d(on) 800 ns rise time t r v cc = 600v, i c = 600a, v ge = 15v, 200 ns turn-off delay time t d(off) r g = 0?, inductive load 600 ns fall time t f 300 ns emitter-collector voltage v ec *1 i e = 600a, v ge = 0v, t j = 25c *5 1.85 2.30 volts (terminal) i e = 600a, v ge = 0v, t j = 125c *5 1.85 volts i e = 600a, v ge = 0v, t j = 150c *5 1.85 volts emitter-collector voltage v ec *1 i e = 600a, v ge = 0v, t j = 25c *5 1.70 2.15 volts (chip) i e = 600a, v ge = 0v, t j = 125c *5 1.70 volts i e = 600a, v ge = 0v, t j = 150c *5 1.70 volts reverse recovery time t rr *1 v cc = 600v, i e = 600a, v ge = 15v 300 ns reverse recovery charge q rr *1 r g = 0?, inductive load 32 c turn-on switching energy per pulse e on v cc = 600v, i c = i e = 600a, 65.9 mj turn-off switching energy per pulse e off v ge = 15v, r g = 0?, 79.1 mj reverse recovery energy per pulse e rr *1 t j = 150c, inductive load 55.2 mj internal gate resistance r g per switch 3.3 ? *1 represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (fwdi). *5 pulse width and repetition rate should be such as to cause negligible temperature rise.
CM600DY-24S dual igbt s-series module 600 amperes/1200 volts 4 11/12 rev. 0 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com thermal resistance characteristics, t j = 25c unless otherwise specifed characteristics symbol test conditions min. typ. max. units thermal resistance, junction to case *4 r th(j-c) q per igbt 37 k/kw thermal resistance, junction to case *4 r th(j-c) d per ifwdi 60 k/kw contact thermal resistance, r th(c-s) thermal grease applied 18 k/kw case to heatsink *4 (per 1/2 module) *6 mechanical characteristics characteristics symbol test conditions min. typ. max. units mounting torque m t main terminals, m6 screw 31 35 40 in-lb m s mounting to heatsink, m6 screw 31 35 40 in-lb weight m 580 grams flatness of baseplate e c on centerline x, y *7 - 100 + 100 m recommended operating conditons, t a = 25c characteristics symbol test conditions min. typ. max. units (dc) supply voltage v cc applied across c1-e2 600 850 volts gate (-emitter drive) voltage v ge(on) applied across g1-es1 / g2-es2 13.5 15.0 16.5 volts external gate resistance r g per switch 0 7.5 ? *4 case temperature (t c ) and heatsink temperature (t s ) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. refer to the figure to the right for chip location. the heatsink thermal resistance should be measured just under the chips. *6 typical value is measured by using thermally conductive grease of = 0.9 [w/(m ? k)]. *7 baseplate (mounting side) flatness measurement points (x, y) are shown in the figure below. x bottom ? concave 3 mm + convex ? concave + convex bottom bottom label side y 0 0 0 20.4 33.6 46.8 66.1 79.3 di1 di1 di1 tr2 tr1 tr1 tr1 di2 tr2 di2 tr2 di2 57.5 44.3 31.1 35.6 49.1 label side tr1/tr2: igbt di1/di2: fwdi
CM600DY-24S dual igbt s-series module 600 amperes/1200 volts 5 11/12 rev. 0 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 0 1.0 0.5 2.5 1.5 2.0 3.0 10 1 emitter-collector voltage, v ec , (volts) free-wheel diode forward characteristics (chip - typical) 10 2 10 4 10 3 emitter current, i e , (amperes) gate-emitter voltage, v ge , (volts) collector-emitter saturation voltage, v ce(sat) , (volts) collector-emitter saturation voltage characteristics (chip - typical) 10 6 8 10 14 12 16 18 20 8 6 4 2 0 t j = 25c i c = 1200a i c = 600a i c = 240a collector-emitter voltage, v ce , (volts) collector current, i c , (amperes) output characteristics (chip - typical) 0 2 4 6 8 10 0 v ge = 20v 10 11 12 13.5 15 9 t j = 25 c 1200 600 800 1000 400 200 collector current, i c , (amperes) collector-emitter saturation voltage, v ce(sat) , (volts ) collector-emitter saturation voltage characteristics (chip - typical) 3.5 2.5 3.0 0 2.0 1.5 0.5 1.0 0 1200 200 400 600 800 1000 v ge = 15v t j = 25c t j = 125c t j = 150c t j = 25c t j = 125c t j = 150c
CM600DY-24S dual igbt s-series module 600 amperes/1200 volts 6 11/12 rev. 0 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com collector-emitter voltage, v ce , (volts) capacitance, c ies , c oes , c res , (nf) capacitance vs. v ce (typical) 10 0 10 2 10 3 10 2 10 1 10 -1 10 0 10 1 v ge = 0v c ies c oes c res 10 -1 collector current, i c , (amperes) 10 3 10 1 10 2 10 2 10 1 switching time, (ns) half-bridge switching characteristics (typical) t d(off) t d(on) t r v cc = 600v v ge = 15v r g = 0 t j = 125c inductive load t f 10 3 collector current, i c , (amperes) 10 3 10 1 10 2 10 2 10 1 switching time, (ns) half-bridge switching characteristics (typical) t d(off) t d(on) t r v cc = 600v v ge = 15v r g = 0 t j = 150c inductive load t f 10 3 switching time vs. gate resistance (typical) t d(off) t d(on) t r v cc = 600v v ge = 15v i c = 600a t j = 125c inductive load t f gate resistance, r g , ( ) 10 3 10 -1 10 0 10 1 10 1 10 2 10 4 10 2 10 3 switching time, t d(on) , t r (ns) switching time, t d(off) , t f (ns) 10 2
CM600DY-24S dual igbt s-series module 600 amperes/1200 volts 7 11/12 rev. 0 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com gate charge, q g , (nc) gate-emitter voltage, v ge , (volts) gate charge vs. v ge 20 0 15 10 5 0 400 1200 1600 800 2000 v cc = 600v i c = 600a t j = 25c emitter current, i e , (amperes) reverse recovery characteristics (typical) 10 3 10 1 10 2 10 2 10 1 10 3 v cc = 600v v ge = 15v r g = 0 t j = 125c inductive load i rr t rr reverse recovery, i rr (a), t rr (ns) emitter current, i e , (amperes) reverse recovery characteristics (typical) 10 3 10 1 10 2 10 2 10 1 10 3 v cc = 600v v ge = 15v r g = 0 t j = 150c inductive load i rr t rr reverse recovery, i rr (a), t rr (ns) switching time vs. gate resistance (typical) switching time, t d(on) , t r (ns) 10 4 10 2 10 3 switching time, t d(off) , t f (ns) gate resistance, r g , ( ) 10 3 10 -1 10 0 10 1 10 1 10 2 10 2 t d(on) v cc = 600v v ge = 15v i c = 600a t j = 150c inductive load t d(off) t r t f
CM600DY-24S dual igbt s-series module 600 amperes/1200 volts 8 11/12 rev. 0 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com gate resistance, r g , ( ) switching energy, e on , e off , (mj) reverse recivery energy, e rr , (mj) half-bridge switching characteristics (typical) v cc = 600v v ge = 15v r g = 0 t j = 125c v cc = 600v v ge = 15v i c /i e = 600a t j = 125c collector current, i c , (amperes) emitter current, i e , (amperes) switching energy, e on , e off , (mj/pulse) reverse recivery energy, e rr , (mj/pulse) 10 2 10 1 10 1 10 2 10 0 10 3 half-bridge switching characteristics (typical) e on e off e rr v cc = 600v v ge = 15v r g = 0 t j = 150c collector current, i c , (amperes) emitter current, i e , (amperes) switching energy, e on , e off , (mj/pulse) reverse recivery energy, e rr , (mj/pulse) 10 2 10 1 10 1 10 2 10 0 10 3 10 3 10 2 10 -1 10 0 10 1 10 1 10 3 10 2 10 -1 10 0 10 1 10 1 half-bridge switching characteristics (typical) e on e off e rr gate resistance, r g , ( ) switching energy, e on , e off , (mj) reverse recivery energy, e rr , (mj) half-bridge switching characteristics (typical) v cc = 600v v ge = 15v i c /i e = 600a t j = 150c e on e off e rr e on e off e rr
CM600DY-24S dual igbt s-series module 600 amperes/1200 volts 9 11/12 rev. 0 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com time, (s) transient thermal impedance characteristics (maximum) 10 0 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -1 10 -2 10 -3 z th = r th ? (normalized value) single pulse t c = 25c per unit base = r th(j-c) = 37 k/kw (igbt) r th(j-c) = 60 k/kw (fwdi) normalized transient thermal impedance, z th(j-c')
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